The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Feb. 20, 1997
Masaharu Hamasaki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In an image sensor 1 wherein an N.sup.+ -type impurity layer 13 to become a light-receiving part of a first conductive type is formed in a well layer 12 of a second conductive type (P-type) provided in a semiconductor substrate 11 of the first conductive type (N-type), an N.sup.- -type impurity layer 14 whose impurity concentration is lower than that of the N.sup.+ -type impurity layer 13 and connected to the lower side of the N.sup.+ -type impurity layer 13 is provided between the N.sup.+ -type impurity layer 13 and the P-type well layer 12. Alternatively, a P-type impurity layer (not shown) whose impurity concentration is lower than that of the P-type well layer 12 and joining with the lower side of the N.sup.+ -type impurity layer 13 may be provided.