The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Mar. 04, 1998
Applicant:
Inventors:
Sang-guen Oh, Suwon, KR;
Chang-eob Soh, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
25049221 ; 2504922 ; 250398 ; 2504923 ;
Abstract
When employing conventional ion implantation equipment, the peripheral edge of the wafer is contaminated by metallic ions generated from the collision of the accelerated ion beam with the disk that supports the target, namely a wafer. The present invention provides a magnet for forming a magnetic field which will repel the generated metallic ions. The magnet is disposed on the disk and surrounds the wafer to prevent the metallic ions from impinging the wafer.
Quick Actions:
Oh, Sang-guen. (1999). Mechanism for preventing metallic ion contamination of a wafer in ion (U.S. Patent No. 5977553). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5977553
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile