The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
May. 22, 1998
Applicant:
Inventor:
Atsushi Shiozaki, Kyoto, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136256 ; 438 71 ; 438 88 ;
Abstract
A method for making a photovoltaic device includes the steps of: (a) forming a transparent conductive layer on a substrate, (b) putting the surface of the transparent conductive layer into contact with an ionized inert gas, and (c) forming a semiconductor layer thereon. The transparent conductive layer is formed such that in the cross-section of the transparent conductive layer, a mean distance between relative minimum points is 2,000 nm or less and a mean tilt angle between a surface line originated from a measuring point and a base line connecting to the nearest two adjacent relative minimum points over the entire measured region is 5.degree. or more.