The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Jul. 18, 1996
Applicant:
Inventors:
Shigeru Kinpara, Hyogo-Ken, JP;
Katsunari Hanaoka, Ono, JP;
Ikue Kawashima, Kobe, JP;
Kazunori Ito, Kakogawa, JP;
Assignee:
Ricoh Company, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438637 ; 438666 ; 438700 ;
Abstract
A method of fabricating a semiconductor device includes the steps of forming a contact hole in an insulator layer, filling the contact hole by a conductor material, removing the conductor material from the upper major surface of the insulator layer to form a conductive plug such that the conductive plug fills the contact hole, applying an anisotropic etching process upon the insulator layer, such that the anisotropic etching process acts substantially vertically and selectively to the insulator layer, with an etching rate substantially larger than an etching rate for the conducive plug.