The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Jun. 05, 1997
Applicant:
Inventors:
Takeo Matsuki, Tokyo, JP;
Yoshihiro Hayashi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438393 ; 438763 ; 438981 ;
Abstract
A thin film formation method includes the deposition step of forming a dielectric thin film consisting of many elements. In the deposition step, first- and second-layer thin films are deposited as lower and upper layers on an underlayer, and at least one of the thin films is crystallized to form the dielectric thin film. The first-layer thin film closer to the underlayer is deposited with a larger composition of at least one kind of constituent element of the thin film than stoichiometric composition to allow for diffusion outside the film.