The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Feb. 09, 1998
Bun Lee, Daejon-Shi, KR;
Jong Hyub Baek, Daejon-Shi, KR;
Electronics and Telecommunications Research Institute, Daejon-Shi, KR;
Abstract
A method for making a surface-type semiconductor laser specially devised to keep the stability of the wavelength at the next generation laser for WDM, which does not cause a raising characteristic variation with time because the laser wavelength of the individual device can be controlled easily and exactly as required and the devices in which the wavelength control have completed is stable in their material properties. The surface-type semiconductor laser is made by growing the cladding layer within the active layer at a low temperature, growing the upper and the underlying superlattice mirror layers and the quantum well structure within the active layer at a high temperature and then sintering the structure thus formed at a high temperature.