The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Aug. 03, 1998
Hsueh-Feng Shih, Taipei, TW;
Industrial Technology Research Institute, Hsinchu Hsien, TW;
Abstract
An ITO layer and a first metal layer is patterned on a glass substrate. A first silicon nitride layer, a silicon layer and a second silicon nitride layer are formed on the substrate. A back-side exposure is introduced using the gate electrodes as a mask. The second silicon nitride layer that is not covered by a positive photoresist is etched. A heavily doped silicon layer is formed over the substrate. A negative photoresist is formed over the heavily doped silicon layer. Then, a further back-side exposure is employed. The heavily doped silicon layer over the etched second silicon nitride layer is removed. Via holes are created to expose a portion of the first metal layer. A second metal layer and a third metal layer are respectively formed. Next, a thermal annealing is performed for forming silicide. Subsequently, a third metal layer and the second metal layer are patterned. Then, the island pattern is defined. Subsequently, a passivation layer formed of silicon nitride layer is deposited on the island pattern.