The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 1999

Filed:

Aug. 26, 1997
Applicant:
Inventors:

Christo P Bojkov, Hillsboro, OR (US);

Richard Lee Fink, Austin, TX (US);

Nalin Kumar, Austin, TX (US);

Alexei Tikhonski, Austin, TX (US);

Zvi Yaniv, Bloomfield Hills, MI (US);

Assignee:

SI Diamond Technology, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
313495 ; 313309 ; 3133 / ; 313496 ; 313310 ; 313311 ; 313336 ; 313351 ;
Abstract

The present invention provides for a field emission device including an anode assembly and a cathode assembly, wherein the cathode assembly further includes a substrate, a plurality of electrically conducting strips deposited on the substrate, and a continuous layer of diamond material deposited over the plurality of electrically conducting strips and portions of the substrate exposed between the plurality of electrically conducting strips. The field emission device may further include a grid assembly including a perforated silicon substrate, a first dielectric layer deposited on the silicon substrate, and a first conducting layer deposited on the first dielectric layer, wherein the first dielectric layer and the first conducting layer have perforations coinciding with perforations of the silicon substrate. The grid assembly may further include a second dielectric layer deposited on an underside of the silicon substrate, wherein the second dielectric layer has perforations coinciding with perforations of the silicon substrate.


Find Patent Forward Citations

Loading…