The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Dec. 18, 1997
Applicant:
Inventors:
Robert C Chen, Los Altos, CA (US);
Jeffrey A Shields, Sunnyvale, CA (US);
Khanh Tran, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257669 ; 257670 ; 257674 ; 257620 ; 257775 ;
Abstract
Leading and trailing metal features in a dense array of conductive lines bordering an open field are formed with side surfaces that gradually taper in the direction of the open field toward an underlying substrate. Each side surface bordering the open field is formed with a sufficient slope to reduce cracking of the subsequently deposited dielectric gap fill layer at high stress areas bordering the open field.