The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Dec. 06, 1997
Farrokh Omid-Zohoor, San Antonio, TX (US);
Nader Radjy, Palo Alto, CA (US);
Other;
Abstract
A method, and structure resulting therefrom, of forming a metal silicide at a shallow junction in a single crystal substrate without encroaching on the shallow junction by forming a metal layer on the substrate over the junction followed by forming a layer of a silicon material which reacts with the metal faster than the silicon in the single crystal substrate. Titanium is the preferred metal and amorphous silicon is the preferred silicon layer and is of a thickness to react with all of the titanium. The two layers are rapid thermal annealed to form titanium silicide. A second rapid thermal anneal is performed which converts the majority of the C49 phase of the titanium silicide to a less resistive and more conductive C54 phase and causes a silicon epitaxial layer to form between silicon substrate and the titanium silicide.