The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 1999

Filed:

Dec. 24, 1997
Applicant:
Inventor:

Gen Tada, Nagano, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257354 ; 257544 ; 257547 ;
Abstract

A high voltage integrated circuit is provided which includes a first conductivity type semiconductor substrate, a first conductivity type isolation region that extends continuously from the first conductivity type semiconductor substrate, a substrate electrode formed on a surface of the first conductivity type isolation region, a second conductivity type island-like region that is formed on the first conductivity type semiconductor substrate, such that the entire periphery of the island-like region is surrounded by the first conductity type isolation region, and a plurality of high voltage MOSFETs that are connected to a common power source and operate independently of each other.


Find Patent Forward Citations

Tada, Gen. (1999). High voltage integrated circuit (U.S. Patent No. 5973366). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5973366

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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