The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Oct. 16, 1997
Applicant:
Inventors:
Min Wha Park, Chungcheongbuk-do, KR;
Hae Chang Yang, Chungcheongbuk-do, KR;
Assignee:
LG Semicon, Co., Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257344 ; 257387 ; 257401 ; 257408 ;
Abstract
A semiconductor device which is applied to access transistors of an SRAM cell to improve its operation performance and a method for fabricating the same are disclosed. The semiconductor device includes a gate insulating layer formed on a semiconductor substrate, a gate electrode formed on the gate insulating layer, lightly doped impurity regions having different lengths beneath surface of the semiconductor substrate at first and second sides of the gate electrode, and heavily doped impurity regions formed beneath the surface of the semiconductor substrate, extending from the lightly doped impurity regions.