The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Nov. 10, 1997
Yang Pan, Singapore, SG;
Chartered Semicoductor Manufacturing Company, Ltd., Singapore, SG;
Abstract
A double layer planar polysilicon capacitor for use within integrated circuits and a method by which that planar polysilicon capacitor is formed. Formed within a semiconductor substrate is a deep trench which is filled with a dielectric material. Formed within the dielectric material within the deep trench is a shallow trench which has a first polysilicon capacitor plate formed therein. The upper surface of the first polysilicon capacitor plate is substantially planar with the semiconductor substrate. Formed upon the first polysilicon capacitor plate is a polysilicon capacitor dielectric layer. Formed upon the polysilicon capacitor dielectric layer is a second polysilicon capacitor plate.