The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Dec. 27, 1995
Hyundai Electrinics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A self-bootstrapping device for sufficiently bootstrapping a bias applied to the gate of a MOS transistor included in the decoder of a semiconductor memory device requiring a high integration degree so that the MOS transistor can transmit the potential from its drain to its source. The self-bootstrapping device includes a first NMOS transistor for a signal transmission, and a second NMOS transistor connected between the gate of the first NMOS transistor and an address decoder circuit, the second NMOS transistor being applied at its gate with a source voltage, wherein the second NMOS transistor comprises a first diffusion region formed at a required portion of a semiconductor substrate, a second diffusion region formed around the first diffusion region while being spaced apart from the first diffusion region by a desired distance, and a gate electrode formed on the semiconductor substrate between the first and second diffusion regions.