The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Nov. 12, 1997
Applicant:
Inventors:
Assignee:
The Furukawa Electric Co. Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; G02F / ;
U.S. Cl.
CPC ...
257184 ; 257431 ; 257436 ; 257458 ; 257464 ; 25037014 ; 359248 ;
Abstract
A waveguide type semiconductor photodetector device comprises a photosensitive section including a photo-absorption layer for converting a signal light into an electric signal, and an optical attenuation section including an optical attenuation layer made of a bulk crystal for attenuating incident light. Assuming that E.sub.g.ATT and E.sub.in are bandgap energy of the optical attenuation layer and optical energy of the incident light signal, respectively, E.sub.in +50 meV.ltoreq.E.sub.g,ATT .ltoreq.E.sub.in +100 meV holds. The optical absorption layer and the optical attenuation layer are made of GaInAs and GaInAsP, respectively, for adapting to incident light of a 1.55 mm wavelength.