The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Dec. 17, 1996
Applicant:
Inventor:
Masayuki Hamada, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438444 ; 438439 ; 438447 ; 438425 ;
Abstract
A method of fabricating a semiconductor device, including the steps of (a) forming a channel at a surface of a semiconductor substrate only in the center of a region X which physically and electrically isolates adjacent regions Y in each of which a device is to be fabricated, and (b) forming a silicon oxide layer over the region X for physically and electrically isolating the adjacent regions Y from each other. The method suppresses dimensional shift and occurrence of a stress, and further makes it difficult for the reverse narrow channel effect to occur only by adding the small number of additional steps thereto.