The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Feb. 13, 1997
Tatsuya Ohori, Tokyo, JP;
Michiko Takei, Kanagawa, JP;
Hongyong Zhang, Kanagawa, JP;
Hiroshi Kuroki, Kanagawa, JP;
Semiconductor Energy Labortory Co., Ltd., Kanagawa-ken, JP;
Abstract
To promote the characteristic of an interface between a gate insulating film and a semiconductor and control the threshold voltage, in forming the insulating film, a surface on which the insulating film is to be formed is previously exposed to activated oxygen and thereafter, the insulating film is formed on the surface, or in steps of manufacturing a thin film transistor, the insulating film is formed with monosilane, dinitrogen monoxide and oxygen as raw materials.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile