The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Feb. 28, 1997
Kristin Brigham, San Francisco, CA (US);
Chungdee Pong, Cupertino, CA (US);
Candescent Technologies Corporation, San Jose, CA (US);
Abstract
Provided is a method of etching an etch layer using a polycarbonate layer as a mask. The method includes placing an etch structure in a reaction chamber, the etch structure including an etch layer underlying a polycarbonate layer, the polycarbonate layer having apertures. The etch layer is then etched using a low pressure-high density plasma generate at a pressure in the range of approximately 1 to 30 millitorr where the ionized particle concentration is at least 10.sup.11 ions/cm.sup.3 and where the ionized particle concentration is substantially equal throughout the volume of the reaction chamber. To increase the etch rate, the etch structure can be heated or biased. To decrease the etch rate, an inert gas can be added to the process gas mixture used to form the plasma.