The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 1999

Filed:

Dec. 17, 1997
Applicant:
Inventor:

Chii-Chang Lee, Austin, TX (US);

Assignee:

Advanced Micro Devices, Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438788 ; 438905 ; 438958 ; 438790 ; 438787 ; 438789 ; 438778 ; 438758 ;
Abstract

The uniformity of the thickness of a deposition layer, generated by a chemical vapor deposition (CVD) process, on a semiconductor wafer is enhanced by providing an undercoating on the deposition chamber. The undercoating is formed at a deposition rate significantly faster than the deposition rate of the material on the wafer. A thin precoat is typically formed over the undercoating. Another method of providing uniformity of thickness includes altering the temperature of the wafer or a series of wafers to alter the deposition rate. The alteration of the temperature of the wafer may include the use of a temperature ramp which increases or decreases the deposition temperature between two or more wafers in a series of wafers.


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