The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Mar. 26, 1998
Hsiu-Wen Huang, Kaohsiung, TW;
Gary Hong, Hsinchu, TW;
United Semiconductor Circuit Corp., Hsinchu, TW;
Abstract
A method for forming an isolation region in an integrated circuit is disclosed. The method includes forming a pad layer on a semiconductor substrate, and forming an oxidation masking layer on the pad layer, wherein the pad layer relieves stress from the oxidation masking layer. Next, portions of the oxidation masking layer and the pad layer are patterned and etched. A first oxide layer is thermally grown on the substrate, and a second oxide spacer is formed on a sidewall of the pad layer and the oxidation masking layer. After forming a nitride spacer on a surface of the second oxide spacer, the substrate is thermally oxidized to form the isolation region in the substrate.