The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Oct. 15, 1997
Applicant:
Inventors:
Jung-min Ha, Seoul, KR;
Byung-lyul Park, Seoul, KR;
Dae-hong Ko, Kyungki-do, KR;
Sang-in Lee, Kyungki-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438-3 ; 438253 ; 438648 ;
Abstract
A method of manufacturing a semiconductor capacitor electrode by growing a metal compound layer over polysilicon storage nodes. The metal compound layer readily growing on the polysilicon storage nodes, but not on portions of an insulating layer between adjacent polysilicon storage nodes.