The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Nov. 17, 1997
Hideharu Koike, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An amplifier circuit influenced less by an offset voltage and capable of permitting an as broad as possible dynamic range is provided. This amplifier circuit includes first and second MOS transistors M1, M2; a first operational amplifier OP1 having an inverting input terminal connected to the drain of the first MOS transistor and a non-inverting input terminal connected to the drain of the second MOS transistor; a second operational amplifier OP2 having two input terminals such that one input terminal is connected to the drain of the second MOS transistor and the other input terminal is connected to a second power supply VD; a first resistance circuit provided between the drain of the first MOS transistor and the output terminal of the first operational amplifier; a second resistance circuit having the same resistance value as that of the first resistance circuit provided between the drain of the second MOS transistor and a third power supply VC; a first load circuit for delivering load current to the drain of the first MOS transistor; and a second load circuit for delivering load current of the same value as the load current to the drain of the second MOS transistor, thus to control load currents flowing in the first and second load circuits by the output of the second operational amplifier so that the drain voltage of the second MOS transistor becomes equal to the second power supply voltage.