The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Feb. 06, 1998
Applicant:
Inventors:
Yasutoshi Komatsu, Kanagawa, JP;
Yutaka Hayashi, Ibaraki, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
327534 ; 327390 ; 327434 ;
Abstract
An insulated-gate field effect transistor comprising a channel forming region, source/drain regions, a gate region, a bias supplying means, and a capacitive element, wherein a potential for controlling a gate threshold voltage of the insulated-gate field effect transistor in an off-state thereof is applied to the channel forming region through the bias supplying means, and a signal having approximately the same phase as a phase of a signal supplied to the gate region is supplied to the channel forming region through the capacitive element.