The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
May. 21, 1997
Applicant:
Inventors:
Reading Maley, Stanford, CA (US);
Albrecht Schoy, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
326 81 ; 326 17 ; 326 68 ;
Abstract
An improved gate oxide protected level shifter is provided which has a higher speed of operation than is traditionally available. The level shifter includes a first capacitor coupled between a first output terminal and the input of an inverter and a second capacitor coupled between a first node and the output of the inverter. As a result, the speed of the transitions at the gates of the pair of cross-coupled P-channel MOS transistors is increased several times.
Quick Actions:
Maley, Reading. (1999). High speed gate oxide protected level shifter (U.S. Patent No. 5969542). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5969542
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile