The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Nov. 13, 1998
Takayuki Iwasa, Yamato, JP;
Masaki Funaki, Yokohama, JP;
Victor Company of Japan, Ltd., Yokohama, JP;
Abstract
A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate. A drain region is formed on the semiconductor substrate. An element separating region is formed on the semiconductor substrate. The drain region includes a heavily doped region and a lightly doped region. The heavily doped region is higher in impurity concentration than the lightly doped region. The lightly doped region has a first portion extending between the gate electrode and the heavily doped region. The lightly doped region has a second portion extending between the element separating region and the heavily doped region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile