The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Aug. 16, 1996
Harvey C Nathanson, Pittsburgh, PA (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
Transistors have source, drain and channel regions all of the same conductivity type. The channel region is very thin, not more than about 500 .ANG. and preferably about 300 .ANG. or even 100 .ANG. in thickness. A very thin oxide layer having a thickness of much less than about 100 .ANG., such as 20 .ANG. and preferably about 5 to about 10 .ANG., isolates a gate electrode from the channel region. When operated at temperatures at or below 150.degree. K, such as 77.degree. K, very low threshold voltages, well below 25 millivolts, are achieved. Gigahertz speed complementary MOS transistors, formed by adjacent NNN and PPP devices exhibit power-delay products of about 1E-16 joules operating at supply voltages on order 100 millivolts or lower, making this technology of particular interest for multi-gigahertz processing rates at very low power.