The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Feb. 07, 1997
Applicant:
Inventors:
Toyoji Chino, Toyonaka, JP;
Yasuhito Kumabuchi, Toyonaka, JP;
Isao Kidoguchi, Kawanishi, JP;
Hideto Adachi, Ibaraki, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438704 ; 438712 ; 438714 ; 438718 ; 438935 ; 216 63 ; 216 64 ; 216 67 ; 216 69 ;
Abstract
An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogon. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas) .gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.