The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Jun. 02, 1998
Applicant:
Inventors:
Suguru Takayama, Chiba, JP;
Michio Arai, Tokyo, JP;
Assignee:
TDK Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H05H / ;
U.S. Cl.
CPC ...
427579 ; 42724915 ; 42725529 ; 427255394 ; 427578 ;
Abstract
The invention provides a method for preparing a silicon thin film at a high deposition rate or a silicon compound thin film having a high dielectric strength and high hardness, without causing damage to other structure films or forming flakes during film deposition. The method for preparing a silicon or silicon compound thin film involves evaporating a material by means of a high density plasma gun, and depositing a thin film of silicon or silicon compound on a substrate.