The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Sep. 19, 1997
Tai-su Park, Kyungki-do, KR;
Ho-kyu Kang, Kyungki-do, KR;
Abstract
Trench isolation methods for integrated circuit substrates may be simplified by eliminating the steps of forming a silicon nitride layer, etching the silicon nitride layer and removing the silicon nitride layer. In particular, a silicon nitride-free mask pattern, such as a photoresist mask pattern, may be formed on a silicon nitride-free integrated circuit substrate. The silicon nitride-free integrated circuit substrate is etched through the silicon nitride-free mask pattern to form a trench in the substrate. An insulating layer is formed in the trench and is chemical-mechanical polished to form a trench isolating layer. By eliminating the silicon nitride layer, simplified processing and improved performance may be obtained.