The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Nov. 27, 1996
Applicant:
Inventor:
Yoh Takano, Gifu-ken, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518529 ; 36518528 ;
Abstract
A non-volatile semiconductor memory device includes a plurality of memory cells. Each of the plurality of memory cells has a control gate, a source, a drain and a floating gate for storing charges. The floating gate is preferably capacitively coupled to at least one of the source and the drain. The memory device also includes a control circuit for controlling voltages that are respectively applied to the control gate, the source and the drain in order to execute an erasure operation of at least one memory cell in a 'memory cell-by-memory cell' format.