The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 1999

Filed:

Dec. 17, 1996
Applicant:
Inventors:

O Glenn Ramer, Los Angeles, CA (US);

John J Drab, Santa Barbara, CA (US);

Larry D McMillan, Colorado Springs, CO (US);

Carlos A Paz de Araujo, Colorado Springs, CO (US);

Assignee:

Raytheon Company, Lexington, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365149 ;
Abstract

A memory includes a bitline data signal input (24), at least one memory unit (20), a writing circuit (128) which writes a polarization state into each memory unit (20) responsive to the bitline data signal input, and a sensing circuit (130) that senses a polarization state of each memory unit (20). Each memory unit (20) includes a ferroelectric capacitor (22) and a buffer amplifier (26) in electrical series relationship with the ferroelectric capacitor (22) and the bitline data signal input (24). The buffer amplifier (26) capacitively isolates the ferroelectric capacitor (22) from the bitline data signal input (24) so that the ferroelectric capacitor (22) may be made smaller in size than would otherwise be the case.


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