The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
May. 06, 1997
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257761 ; 257769 ; 257295 ;
Abstract
In a semiconductor memory device, a tantalum silicon nitride film or hafnium silicon nitride film is provided, as a diffusion barrier layer, between a polysilicon plug which electrically connects a source/drain region to a lower platinum electrode of a capacitor, formed on a silicon substrate, and the lower platinum electrode. The tantalum silicon nitride film has a composition of Ta.sub.X Si.sub.1-X N.sub.Y wherein 0.75 .ltoreq.X.ltoreq.0.95 and 1.0 .ltoreq.Y.ltoreq.1.1. The hafnium silicon nitride film has a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2<X<1.0 and 0<Y<1.0.