The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Apr. 01, 1997
Applicant:
Inventor:
Udo Schwalke, Heldenstein, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257407 ; 257328 ; 257336 ; 257344 ; 257408 ;
Abstract
A circuit structure having at least one MOS transistor whose source/drain regions are doped by a first conductivity type and whose gate electrode is doped by a conductivity type which is opposite to the first. The gate electrode has a lower dopant concentration at at least one of its edges than in its center. In the ON state, the gate electrode is driven to accumulation, with the result being that no gate depletion occurs. Such a circuit structure is also suitable for CMOS circuits containing PMOS transistors having an n-doped gate.