The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Jul. 24, 1997
Applicant:
Inventor:
Ting P Yen, Fremont, CA (US);
Assignee:
Cypress Semiconductor Corp., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257383 ; 257382 ; 257388 ; 257903 ; 438647 ; 438649 ;
Abstract
A semiconductor structure that includes a silicon substrate which has a top surface, a diffusion region formed in the substrate adjacent to the top surface, a polysilicon gate formed on the top surface of the substrate adjacent to but not contacting the diffusion region, an insulator layer substantially covers the polysilicon gate and the diffusion region, the layer contains a via opening therein, and an electrically conducting plug filling at least partially the via opening providing electrical communication between the polysilicon gate and the diffusion region.