The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Dec. 23, 1997
Stuart A Solin, Princeton Junction, NJ (US);
Tineke Thio, Princeton, NJ (US);
NEC Research Institute, Inc., Princeton, NJ (US);
Abstract
The low-field magnetoresistance of a high carrier mobility semiconductor with inhomogeneities which are more conducting than the surrounding semiconductor material matrix is significantly enhanced compared to the magnetoresistance of the homogeneous material. The enhancement results from a magnetic field induced geometric effect in which current is expelled from the conducting inhomogeneity. The enhanced giant magnetoresistance is demonstrated at low field in (near) zero-band-gap material, such as Hg.sub.1-x Cd.sub.x Te(x.about.0.1). The effect is applied to the fabrication of magnetic read head sensors such as Corbino disc, bar magnetoresistance sensors and thin film sensors.