The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
May. 06, 1996
Applicant:
Inventors:
Zvonimir Gabric, Zorneding, DE;
Oswald Spindler, Vaterstetten, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
42725523 ; 42725537 ; 427255393 ;
Abstract
A method for depositing a silicon oxide layer by ozone-activated gas phase deposition, uses tetraethyl orthosilicate (TEOS). An initially high gas flow ratio of TEOS to ozone is increasingly varied to a low steady-state ratio.
Gabric, Zvonimir. (1999). Method for depositing a silicon oxide layer (U.S. Patent No. 5965203). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5965203
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile