The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Mar. 21, 1997
Naohiro Sugiyama, Nagoya, JP;
Atsuto Okamoto, Nagoya, JP;
Toshihiko Tani, Nagoya, JP;
Nobuo Kamiya, Nisshin, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-ken, JP;
Abstract
An easy and low-cost method of producing a large-size and high-purity silicon carbide (SiC) single crystal includes reacting silicon vapor directly with a carbon-containing compound gas under a heated atmosphere (growth space 14) to grow a silicon carbide single crystal (15) on a silicon carbide seed crystal (12), in which the silicon vapor generated from molten silicon (13) is used as a silicon vapor source, and a hydrocarbon gas (9) (e.g., propane gas) is used as the carbon-containing compound gas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile