The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Jun. 25, 1997
Kwang-Soo Kim, Kyoungki-do, KR;
Kyung-Dong Yoo, Seoul, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A method for fabricating a CMOS device having BILLI (buried implanted layers for lateral isolation) structure capable of effectively preventing latch-up is disclosed, having the following steps. A mask pattern is formed on the semiconductor substrate of a predetermined conductivity type to expose a region where the MOS transistor, having a same conductivity type as that of the substrate, is to be formed wherein the mask pattern has a vertical boundary face having a gradual slope. A buried layer is then formed in the form of island by ion-implanting the impurity ions into the substrate to pass through the mask pattern, the buried layer having a same conductivity type as that of the substrate, and being formed to be continuous under the vertical boundary face of the mask pattern.