The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Jan. 27, 1998
Alexander Viktorovich Garachtchenko, Mountain View, CA (US);
Samuel Suresh Martin, Gillette, NJ (US);
Other;
Abstract
A low-noise amplifier is disclosed that is capable of amplifying a signal with high gain (e.g., >60 dB) and low noise (e.g., <2 nV/Hz.sup.-1/2) over a large frequency bandwidth (e.g., from 1 Hz to 1 MHz) and with a high input impedance (e.g., >10.sup.6 .OMEGA.), high common mode rejection and high immunity to external noise sources. An illustrative embodiment of the present invention comprises: a first field-effect transistor having a first lead, a second lead and a third lead; a second field-effect transistor having a first lead, a second lead and a third lead, wherein the first lead of the first field-effect transistor is electrically connected to the first lead of the second field-effect transistor, the second lead of the first field-effect transistor is electrically connected to the second lead of the second field-effect transistor, and the third lead of the first field-effect transistor is electrically connected to the third lead of the second field-effect transistor; and a first bipolar junction transistor having a first lead, a second lead and a third lead, wherein the first lead of the first bipolar junction transistor is electrically connected to the first lead of the first field-effect transistor.