The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Feb. 20, 1998
Lloyd F Linder, Agoura Hills, CA (US);
Kelvin T Tran, Carson, CA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A monolithic class AB (push-pull) low noise amplifier having feedback and self bias. The low noise amplifier exhibits low power, high intercept point, low noise figure, well matched terminal impedances over wide range of frequency, and may be monolithically implemented. The amplifier may be produced using CMOS process technologies. The amplifier comprises NMOS and PMOS transistors serially coupled between a voltage rail and ground. The amplifier uses self biasing embodied in a bias resistor coupled between an input shunt capacitor and respective drains of the NMOS and PMOS transistors, which allows for maximum gate-to-source voltage and higher transconductance for a minimum aspect ratio (W/L). This results in a wider bandwidth and reduced power for the amplifier. The use of a shunt--shunt feedback network comprising a shunt resistor and a serially coupled shunt capacitor coupled between respective gates and drains of the NMOS and PMOS transistors, provides better terminal impedance matching over wide bandwidth.