The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Jul. 31, 1996
Yoshimitsu Yamauchi, Nabari, JP;
Masanori Yoshimi, Nara, JP;
Shinichi Sato, Nara, JP;
Keizo Sakiyama, Kashihara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In the nonvolatile semiconductor memory including a memory cell array having memory cells arranged in a matrix of the present invention, the memory cell array includes: a semiconductor substrate; a tunnel oxide film formed on the semiconductor substrate; floating gates formed on the tunnel oxide film; first insulating films formed on the floating gates; and control gates formed on the first insulating films, wherein each of the floating gates includes a first polysilicon film and second polysilicon films, the second polysilicon films being formed on both sides of the first polysilicon film, second insulating films are formed on the tunnel oxide film between the first polysilicon films, the second insulating films having a predetermined thickness which is thinner than that of the first polysilicon films, and the second polysilicon films are formed on the second insulating films.