The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1999
Filed:
Sep. 10, 1997
Tzu-Shih Yen, Taipei, TW;
Erik S Jeng, Taipei, TW;
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A method for forming a patterned target layer within an integrated circuit. The method employs a plasma pre-treatment of a patterned photoresist layer employed in patterning a blanket focusing which in turn is employed in patterning the patterned target layer from a blanket target layer. The plasma pre-treatment employs a plasma pre-treatment composition comprising carbon tetrafluoride and argon without oxygen. After the plasma pre-treatment, the blanket focusing layer is etched with a reproducible negative etch bias in a plasma etch method employing an etchant gas composition comprising carbon tetrafluoride and argon without oxygen. Through the method there may be formed patterned target layers, with enhanced uniformity, of linewidth dimension as narrow as about of 0.25 microns while employing near ultra-violet (NUV) (ie: 365 nm) photoexposure methods.