The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1999
Filed:
Apr. 30, 1997
Takeo Matsuki, Tokyo, JP;
Jun Kawahara, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for manufacturing a nonvolatile semiconductor memory device comprises the steps of forming a ferroelectric capacitor, sputtering a first dielectric film on the ferroelectric capacitor, and depositing a second dielectric film on the first dielectric film by a CVD process using tetraethylorthosilicate as a source gas and ozone as an oxidizing agent at a temperature between 350 and 500.degree. C. The first dielectric film prevents hydrogen and water from being introduced into the ferroelectric film of the ferroelectric capacitor during and after the CVD process, thereby improving polarization, leakage current and dielectric breakdown characteristics of the ferroelectric capacitor.