The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1999
Filed:
Aug. 20, 1998
Dong-Jin Jung, Kyunggi-do, KR;
Abstract
A ferroelectric random access memory device includes a plurality of reference cell array blocks implemented in a reference cell array. If the reference voltage from one of the reference cell array blocks is biased toward the voltage level of a logical data '1' or '0', another reference cell array block is chosen, which has ferroelectric capacitors of smaller or larger size than those of the selected reference cell array block. In this manner, the alternate reference cell array block provides the reference bit lines with required reference voltages. As a result, the sensing margin of the memory cells is increased, causing the reliability of the ferroelectric random access memory device to be improved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile