The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1999
Filed:
Nov. 26, 1997
Applicant:
Inventor:
Takaki Niwa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257194 ; 257280 ; 257284 ; 257192 ; 257279 ; 257 20 ;
Abstract
A hetero junction type field effect transistor can control a short channel effect, reduce the fluctuation of a threshold, and improve a yield. The hetero junction type field effect transistor comprises: a semiconductor substrate, a first electron feed layer made of a doped semiconductor having a wider band gap than the channel layer, a channel layer made of a non-doped semiconductor, a second electron feed layer comprising a laminate structure of a plurality of semiconductor layers having a wider band gap than the channel layer and having a thickness of 100 .ANG. or less, and a gate electrode, a source electrode, and a drain electrode.