The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Mar. 08, 1996
Applicant:
Inventor:
Shunichi Ishihara, Souraku-gun, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438491 ; 438507 ; 438508 ;
Abstract
The present invention provides a method for depositing polycrystal Si films, including n-type and p-type polycrystal Si films, using a material gas, a doping gas, and hydrogen gas. This method comprises a film-forming time-period having:
Quick Actions:
Ishihara, Shunichi. (1999). Deposition of polycrystal si film (U.S. Patent No. 5956602). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5956602
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