The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Mar. 01, 1996
Kumar Shiralagi, Chandler, AZ (US);
Sung P Pack, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of fabricating ultra-small semiconductor devices including providing a mesa on a substrate. A plurality of overlying layers of semiconductor material are grown in overlying relationship to the mesa so that a perpendicular discontinuity is produced in the layers at the mesa sidewall and the first layer overlying the mesa is in contact with the last layer overlying the substrate adjacent the mesa. A spacer of nonconductive material is formed on the discontinuity and the plurality of overlying layers are etched, using the spacer as a mask, so as to form a contact area overlying the mesa and a contact area overlying the substrate adjacent the mesa, and a semiconductor device positioned adjacent the sidewall beneath the spacer and between the contact areas.