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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5956359 B1

PDFFull Text
Date of Patent:
Sep. 21, 1999

Filed:

Jun. 14, 1996

Semiconductor diode laser and method of manufacturing same

Applicant:
Inventors:

Alfred R Adams, Guildford, GB;

Alistair T Meney, Guildford, GB;

James R Downes, Guildford, GB;

Adriaan Valster, Waalre, NL;

Gerard A Acket, Waalre, NL;

Assignee:

Uniphase Opto Holdings, Inc., San Jose, CA (US);

Attorney:

Glenn; Michael A.

Primary Examiner:

Rodney Bovernick

Assistant Examiner:

Ellen E Kang

Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 372 43 ;
Abstract

The invention relates to a laser with a multi quantum well active layer in which a portion of the quantum well and barrier layers is provided with a compression stress, while another portion is provided with an oppositely directed tensile stress. Said stresses are overcompensated such that the net stress is a tensile stress. Preferably, the laser comprises one or several quantum well layers with a compression stress and a number of barrier layers with an excess tensile stress.

Find Patent Forward Citations

Adams, Alfred. (1999). Semiconductor diode laser and method of manufacturing same (U.S. Patent No. 5956359). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5956359

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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