The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Feb. 11, 1998
Jong Seuk Lee, Kgouriggido, KR;
Hyundai Electronics America, San Jose, CA (US);
Abstract
The present invention provides a novel nonvolatile Flash EEPROM array design which allows for array, block or sector erase capabilities. The relatively simple transistor design layout of the present invention allows small portions of the EEPROM array to be erased without affecting data stored in the remaining portion of the array. In addition, given the block structured layout of the Flash EEPROM array, adjacent blocks in the array can share transistor control circuitry, thus minimizing the size of the array. The novel nonvolatile Flash EEPROM array preferably comprises a plurality of blocks which comprise a plurality of sectors of NOR-gate transistors. Each transistor has a drain, a source, and a control gate. Preferably, the drains of each transistor in a column are electrically coupled, the control gates of each transistor in a row are electrically coupled, and the sources of all the transistors in a sector are electrically coupled. A sector of the nonvolatile Flash EEPROM array preferably comprises 8 rows and 512 columns of transistors and a block preferably comprises 128 vertically stacked sectors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile