The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Mar. 25, 1996
Applicant:
Inventors:
Tadahiko Hirai, Fuji, JP;
Yasuo Tarui, Tokyo 203, JP;
Assignees:
Asahi Kasei Kogyo Kabushiki Kaisha, Osaka, JP;
Other;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257295 ; 257406 ; 257324 ; 438287 ;
Abstract
An Si oxide film, an oriented paraelectric oxide thin film and an oriented ferroelectric thin film are laminated on an Si single crystal substrate having a region for a source and a drain. A conductor thin film is formed in a portion not covered with an insulating film. A laminated structure formed of the Si oxide film, the oriented paraelectric oxide thin film and the oriented ferroelectric thin film is used as a gate of a transistor. The Si oxide film functions as a carrier injection inhibiting layer.